N100V,RD(MAX)<10.5M@
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 55A
RDS(on): RD(max)<10.5mΩ@10V
VTH: VTH1V~2.5V
Package: TO-220F
N100V,RD(MAX)<10.5M@
MOSFET N-CH 100V 33A TO-220F Product overview: GT105N10F from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT105N10F can be used for catalog matching and distributor lookup.
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | GT105N10F | 3141-GT105N10F-ND | 278-GT105N10F | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT105N10F | Single FETs, MOSFETs | 100V 33A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | |||
| IDSS | 33000 milliamps |
