N100V, 21A,RD<9.5M@10V,VTH1
N100V, 21A,RD<9.5M@10V,VTH1
N100V, 21A,RD<9.5M@10V,VTH1
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 21A
RDS(on): RD(max)<9.5mΩ@10V
VTH: VTH1.2V~2.6V
Package: SOP-8
MOSFET N-CH 100V 11A SOP-8 Product overview: GT095N10S from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT095N10S can be used for catalog matching and distributor lookup.
N100V, 21A,RD<9.5M@10V,VTH1
N100V, 21A,RD<9.5M@10V,VTH1
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-GT095N10SDKR-ND | 278-GT095N10S | GT095N10S | GT095N10S | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT095N10S | 100V 11A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | Tape & Reel (TR) | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| PD | 3100 milliwatts | 3100 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
