Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT095N10D5

N100V,RD(MAX)<11M@10V,RD(MAX)<15

N100V,RD(MAX)<11M@10V,RD(MAX)<15

N100V,RD(MAX)<11M@10V,RD(MAX)<15

MOSFET N-CH 100V 55A DFN5*6-8L Product overview: GT095N10D5 from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT095N10D5 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376858-GT095N10D5
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Vgs (Max): ±20V
Power Dissipation (Max): 74W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 55A
RDS(on): RD(max)<11mΩ@10V
VTH: VTH1.0V~2.5V
Package: DFN5*6-8L