Goford Semiconductor Co., Ltd. 10V MOSFET Transistor GT088N06T

Description
N60V,RD(MAX)<9M@10V, RD(MAX)<13M@ Product overview: GT088N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT088N06T can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
N60V,RD(MAX)<9M@10V, RD(MAX)<13M@ Product overview: GT088N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT088N06T can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
10V MOSFET Transistor
278-GT088N06T
10V MOSFET Transistor 278-GT088N06T
N60V,RD(MAX)<9M@10V, RD(MAX)<13M@ Product overview: GT088N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT088N06T can be used for catalog matching and distributor lookup.

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Product overview: GT088N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT088N06T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT088N06T -  - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT088N06T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT088N06T
N/P Channel: N-CH Voltage(VDS): 60V Current(ID): 60A RDS(on): RD(max)<9mΩ@10V VTH: VTH1.0V~2.4V Package: TO-220

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 60A
RDS(on): RD(max)<9mΩ@10V
VTH: VTH1.0V~2.4V
Package: TO-220

Buy Now Datasheet
Single FETs, MOSFETs - 3141-GT088N06T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-GT088N06T-ND
Single FETs, MOSFETs 3141-GT088N06T-ND
N60V,RD(MAX)<9M@10V, RD(MAX)<13M@

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
GT088N06T
Triode/MOS Tube/Transistor >> MOSFETs GT088N06T
60V 60A 8mΩ 75W 2.4V@250uA null TO-220 MOSFETs ROHS

60V 60A 8mΩ 75W 2.4V@250uA null TO-220 MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - GT088N06T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
GT088N06T
Single FETs, MOSFETs GT088N06T
N60V,RD(MAX)<9M@10V, RD(MAX)<13M@

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey LCSC Electronics Technology (HK) Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-GT088N06T 3141-GT088N06T-ND GT088N06T GT088N06T
Product Name 10V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT088N06T Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-220; SOT3 TO-220; TO-220-3 TO-220 TO-220; TO-220-3
Packing Method Tube
Polarity N-Channel N-Channel; N-Channel
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4 suppliers