Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT088N06T GT088N06T

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 60A
RDS(on): RD(max)<9mΩ@10V
VTH: VTH1.0V~2.4V
Package: TO-220

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Product overview: GT088N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT088N06T can be used for catalog matching and distributor lookup.

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@