Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT085N10TH

The GT085N10TH is an N-channel enhancement mode MOSFET designed for power switching and DC/DC converter applications. It is packaged in a TO-220 case and rated for a drain-source voltage of 100V, with a continuous drain current of 70A at 25°C and 44A at 100°C. The on-resistance is specified at a maximum of 8.5mΩ at VGS=10V and ID=20A. The device is avalanche tested with a single pulse energy rating of 144mJ and features a thermal resistance from junction-to-case of 1.25°C/W and junction-to-ambient of 50°C/W. It operates over a junction and storage temperature range of -55°C to 150°C and is RoHS compliant.