N100V, 70A,RD<7.5M@10V,VTH1
N100V, 70A,RD<7.5M@10V,VTH1
N100V, 70A,RD<7.5M@10V,VTH1
N100V, 70A,RD<7.5M@10V,VTH1
N100V, 70A,RD<7.5M@10V,VTH1
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 70A
RDS(on): RD(max)<8mΩ@10V
VTH: VTH1.0V~3.0V
Package: TO-263
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-GT080N10M | 3141-GT080N10MCT-ND | GT080N10M | |
| Product Name | 70A 10V 3V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT080N10M |
| PD | 100000 milliwatts | 100000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 |
| Packing Method | Tape & Reel (TR) |