Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT080N10M GT080N10M

N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 70A
RDS(on): RD(max)<8mΩ@10V
VTH: VTH1.0V~3.0V
Package: TO-263

N100V, 70A,RD<7.5M@10V,VTH1V~3V,

N100V, 70A,RD<7.5M@10V,VTH1V~3V,

N100V, 70A,RD<7.5M@10V,VTH1V~3V,

N100V, 70A,RD<7.5M@10V,VTH1V~3V, Product overview: GT080N10M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 70A, 10V, 3V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 70A, 10V, 3V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT080N10M can be used for catalog matching and distributor lookup.

N100V, 70A,RD<7.5M@10V,VTH1V~3V,