N100V, 120A,RD<4.5M@10V,VTH
N100V, 120A,RD<4.5M@10V,VTH
N100V, 120A,RD<4.5M@10V,VTH
N100V, 120A,RD<4.5M@10V,VTH
N100V, 120A,RD<4.5M@10V,VTH
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 120A
RDS(on): RD(max)<4.5mΩ@10V
VTH: VTH2V~4V
Package: TO-263
N100V, 120A,RD<4.5M@10V,VTH
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | GT045N10M | 3141-GT045N10MTR-ND | 278-GT045N10M | GT045N10M | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 120A 10V 4V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 120000 milliamps |