Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT045N10M

Description
N100V, 120A,RD<4.5M@10V,VTH 2V~4V
  • Single FETs, MOSFETs - 3141-GT045N10MTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 3141-GT045N10MDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 3141-GT045N10MCT-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - GT045N10M - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GT045N10M - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
N100V, 120A,RD<4.5M@10V,VTH 2V~4V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 3141-GT045N10MTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-GT045N10MTR-ND
Single FETs, MOSFETs 3141-GT045N10MTR-ND
N100V, 120A,RD<4.5M@10V,VTH 2V~4V

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Buy Now Datasheet
Single FETs, MOSFETs - 3141-GT045N10MDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-GT045N10MDKR-ND
Single FETs, MOSFETs 3141-GT045N10MDKR-ND
N100V, 120A,RD<4.5M@10V,VTH 2V~4V

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Buy Now Datasheet
Single FETs, MOSFETs - 3141-GT045N10MCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-GT045N10MCT-ND
Single FETs, MOSFETs 3141-GT045N10MCT-ND
N100V, 120A,RD<4.5M@10V,VTH 2V~4V

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M
N/P Channel: N-CH Voltage(VDS): 100V Current(ID): 120A RDS(on): RD(max)<4.5mΩ@10V VTH: VTH2V~4V Package: TO-263

N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 120A
RDS(on): RD(max)<4.5mΩ@10V
VTH: VTH2V~4V
Package: TO-263

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
120A 10V 4V MOSFET Transistor
278-GT045N10M
120A 10V 4V MOSFET Transistor 278-GT045N10M
N100V, 120A,RD<4.5M@10V,VTH 2V~4V Product overview: GT045N10M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120A, 10V, 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 10V, 4V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT045N10M can be used for catalog matching and distributor lookup.

N100V, 120A,RD<4.5M@10V,VTH2V~4V Product overview: GT045N10M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120A, 10V, 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 10V, 4V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT045N10M can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - GT045N10M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
GT045N10M
Single FETs, MOSFETs GT045N10M
N100V, 120A,RD<4.5M@10V,VTH 2V~4V

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GT045N10M - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
GT045N10M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs GT045N10M
N100V, 120A,RD<4.5M@10V,VTH 2V~4V

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 3141-GT045N10MTR-ND 278-GT045N10M GT045N10M GT045N10M
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT045N10M 120A 10V 4V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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