N100V,190A,RD<3.5M@1
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 45A
RDS(on): RD(max)<12mΩ@10V
VTH: VTH2.0V~4V
Package: TO-220
N100V,190A,RD<3.5M@1
N100V,190A,RD<3.5M@1
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-GT035N10T | 3141-GT035N10T-ND | GT035N10T | |
| Product Name | 190A 10V 0V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT035N10T | Single FETs, MOSFETs | Single FETs, MOSFETs |
| PD | 250000 milliwatts | 250000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
| Packing Method | Tube |