N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 170A
RDS(on): RD(max)<3.5mΩ@10V
VTH: VTH1.2V~1.6V~2.5V
Package: TO-220
N-CH, 60V,170A, RD(MAX)<3.5M@10V Product overview: GT035N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 170A, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 170A, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT035N06T can be used for catalog matching and distributor lookup.
N-CH, 60V,170A, RD(MAX)<3.5M@10V
MOSFET N-CH 60V 170A TO-220
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-GT035N06T | 3141-GT035N06T-ND | GT035N06T | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT035N06T | 60V 170A 10V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs |
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 |
| PD | 215000 milliwatts | 215000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Packing Method | Tube |
