N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 170A
RDS(on): RD(max)<2.5mΩ@10V
VTH: VTH1.2V~2.5V
Package: TO-263
N60V,170A,RD<2.5M@10
N60V,170A,RD<2.5M@10
N60V,170A,RD<2.5M@10
MOSFET N-CH 60V 170A TO-263 Product overview: GT025N06AM from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 170A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 170A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT025N06AM can be used for catalog matching and distributor lookup.
N60V,170A,RD<2.5M@10
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-GT025N06AMCT-ND | 278-GT025N06AM | GT025N06AM | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT025N06AM | Single FETs, MOSFETs | 60V 170A MOSFET Transistor | Single FETs, MOSFETs |
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 215000 milliwatts | 215000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
