Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT013N04Q

The GT013N04Q is an N-channel enhancement mode power MOSFET in a TO-247 package, designed for power switching and DC/DC converter applications. It has a drain-source voltage rating of 40V, a continuous drain current of 195A at 25°C, and a drain-source on-resistance of up to 2.2mΩ at Vgs=10V. The device is rated for 96W power dissipation, with a maximum junction-to-case thermal resistance of 1.3°C/W and a junction-to-ambient thermal resistance of 50°C/W. It is 100% avalanche tested with a single-pulse avalanche energy of 182mJ and meets RoHS compliance standards.