Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4 GS65R060Q4

Description
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 36A RDS(on): RD(max)=60mΩ@18V VTH: VTH2V~4V Package: TO-247
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4 - Win Source Electronics
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Description
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 36A RDS(on): RD(max)=60mΩ@18V VTH: VTH2V~4V Package: TO-247
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4 - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 36A RDS(on): RD(max)=60mΩ@18V VTH: VTH2V~4V Package: TO-247

N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 36A
RDS(on): RD(max)=60mΩ@18V
VTH: VTH2V~4V
Package: TO-247

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - GS65R060Q4
Package Type TO-247; SOT3
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