N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 20A
RDS(on): RD(max)<170mΩ@10V
VTH: VTH2.5V~4.5V
Package: TO-247
N650V,RD(MAX)<170M@1
N650V,RD(MAX)<170M@1
N650V,RD(MAX)<170M@1
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-GC20N65Q-ND | 278-GC20N65Q | GC20N65Q | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC20N65Q | Single FETs, MOSFETs | 10V 5V MOSFET Transistor | Single FETs, MOSFETs |
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | Tube | TO-247; TO-247-3 |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 151000 milliwatts | 151000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |