Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GC180N65F

The GC180N65F is an N-channel enhancement mode power MOSFET designed for AC-DC switch-mode power supplies, PFC circuits, and industrial power applications. It is packaged in a TO-220F case and rated for a drain-source voltage of 650 V, with a continuous drain current of 20 A at 25°C and 12 A at 100°C. The device has a maximum on-resistance of 180 mΩ at 10 V gate-source voltage and a power dissipation limit of 37 W. It is 100% avalanche tested with a single-pulse avalanche energy of 180 mJ and operates from -55°C to 150°C. Thermal resistance from junction-to-case is 3.4 °C/W and junction-to-ambient is 61 °C/W. The part is RoHS compliant.