N650V,RD(MAX)<360M@1
N650V,RD(MAX)<360M@1
N650V,RD(MAX)<360M@1
N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 11A
RDS(on): RD(max)<360mΩ@10V
VTH: VTH2.5V~4V
Package: TO-220
N650V,RD(MAX)<360M@1
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | GC11N65T | 278-GC11N65T | 3141-GC11N65T-ND | GC11N65T | |
| Product Name | Single FETs, MOSFETs | 10V 5V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 650 volts | ||||
| IDSS | 11000 milliamps |