N650V,RD(MAX)<360M@1
N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 11A
RDS(on): RD(max)<360mΩ@10V
VTH: VTH2.5V~4V
Package: TO-220
N650V,RD(MAX)<360M@1
N650V,RD(MAX)<360M@1
N650V,RD(MAX)<360M@1
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-GC11N65T | 3141-GC11N65T-ND | GC11N65T | GC11N65T | |
| Product Name | 10V 5V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 192000 milliwatts | 192000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
| Packing Method | Tube | Tube; Tube |