Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T GC11N65T

Description
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 11A RDS(on): RD(max)<360mΩ@10V VTH: VTH2.5V~4V Package: TO-220
Request a Quote Datasheet
Description
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 11A RDS(on): RD(max)<360mΩ@10V VTH: VTH2.5V~4V Package: TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T -  - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T
N/P Channel: N-CH Voltage(VDS): 650V Current(ID): 11A RDS(on): RD(max)<360mΩ@10V VTH: VTH2.5V~4V Package: TO-220

N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 11A
RDS(on): RD(max)<360mΩ@10V
VTH: VTH2.5V~4V
Package: TO-220

Buy Now Datasheet
Single FETs, MOSFETs - 3141-GC11N65T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-GC11N65T-ND
Single FETs, MOSFETs 3141-GC11N65T-ND
N650V,RD(MAX)<360M@1 0V,VTH2.5V~4

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Buy Now Datasheet
Singapore, Singapore
10V 5V MOSFET Transistor
278-GC11N65T
10V 5V MOSFET Transistor 278-GC11N65T
N650V,RD(MAX)<360M@1 0V,VTH2.5V~4 Product overview: GC11N65T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, 5V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GC11N65T can be used for catalog matching and distributor lookup.

N650V,RD(MAX)<360M@10V,VTH2.5V~4 Product overview: GC11N65T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, 5V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GC11N65T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GC11N65T - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
GC11N65T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs GC11N65T
N650V,RD(MAX)<360M@1 0V,VTH2.5V~4

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Supplier's Site
Single FETs, MOSFETs - GC11N65T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
GC11N65T
Single FETs, MOSFETs GC11N65T
N650V,RD(MAX)<360M@1 0V,VTH2.5V~4

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 3141-GC11N65T-ND 278-GC11N65T GC11N65T GC11N65T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - GC11N65T Single FETs, MOSFETs 10V 5V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Package Type TO-220; SOT3 TO-220; TO-220-3 Tube TO-220; TO-220-3 TO-220; TO-220-3
Polarity N-Channel N-Channel; N-Channel
PD 192000 milliwatts 192000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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