Goford Semiconductor Co., Ltd. 10V 5V MOSFET Transistor GC11N65K

N650V,RD(MAX)<360M@10V,VTH2.5V~4 Product overview: GC11N65K from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, 5V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GC11N65K can be used for catalog matching and distributor lookup.

Win Source Part Number: 1145074-GC11N65K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Mfr: Goford Semiconductor
Other Names: 3141-GC11N65KTR,3141-GC11N65KDKR,3141-GC11N65KCT
Drive Voltage (Max Rds On, Min Rds On): 10V

N/P Channel: N-CH
Voltage(VDS): 650V
Current(ID): 11A
RDS(on): RD(max)<360mΩ@10V
VTH: VTH2.5V~4V
Package: TO-252

N-Channel 650V 11A (Tc) 78W (Tc) Surface Mount TO-252

N-Channel 650V 11A (Tc) 78W (Tc) Surface Mount TO-252

N650V,RD(MAX)<360M@10V,VTH2.5V~4