N200V, ESD,2A,RD<0.7@10V,VT
N200V, ESD,2A,RD<0.7@10V,VT
N200V, ESD,2A,RD<0.7@10V,VT
N/P Channel: N-CH
Voltage(VDS): 200V ESD
Current(ID): 2A
RDS(on): RD<0.7Ω@10V
VTH: VTH1V~2.5V
Package: SOT-223
MOSFET N-CH ESD 200V 2A SOT-223 Product overview: G7K2N20HE from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G7K2N20HE can be used for catalog matching and distributor lookup.
N200V, ESD,2A,RD<0.7@10V,VT
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-G7K2N20HECT-ND | 278-G7K2N20HE | G7K2N20HE | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G7K2N20HE | 200V 2A MOSFET Transistor | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT223; TO-261-4, TO-261AA | SOT3 | Tape & Reel (TR) | SOT223; TO-261-4, TO-261AA |
| PD | 1800 milliwatts | 1800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
