G6N90F is an N-channel enhancement mode power MOSFET designed for high-efficiency switch mode power supplies and DC/DC converters. It is packaged in a TO-220F case with a maximum drain-source voltage of 900 V and a continuous drain current of 6 A at 25°C. The device has a drain-source on-resistance of up to 3.0 Ω at V_GS = 10 V and can sustain a single-pulse avalanche energy of 180 mJ. It is RoHS compliant and has a thermal resistance junction-to-case of 1.8 °C/W and junction-to-ambient of 62.5 °C/W. The operating junction and storage temperature range is -55°C to 150°C.
MOSFET N-CH 900V 6A 69W 3(MAX) T
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 3141-G6N90F-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
