Goford Semiconductor Co., Ltd. 60V -10V 2.0V MOSFET Transistor G65P06T

Description
P-60V,RD(MAX)<18M@-1 0V,VTH-2.0V~ Product overview: G65P06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -10V, 2.0V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -10V, 2.0V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G65P06T can be used for catalog matching and distributor lookup.
  • Single FETs, MOSFETs - G65P06T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 3141-G65P06T-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-60V,RD(MAX)<18M@-1 0V,VTH-2.0V~ Product overview: G65P06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -10V, 2.0V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -10V, 2.0V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G65P06T can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
60V -10V 2.0V MOSFET Transistor
278-G65P06T
60V -10V 2.0V MOSFET Transistor 278-G65P06T
P-60V,RD(MAX)<18M@-1 0V,VTH-2.0V~ Product overview: G65P06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -10V, 2.0V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -10V, 2.0V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G65P06T can be used for catalog matching and distributor lookup.

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Product overview: G65P06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, -10V, 2.0V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, -10V, 2.0V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G65P06T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - G65P06T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G65P06T
Single FETs, MOSFETs G65P06T
P-60V,RD(MAX)<18M@-1 0V,VTH-2.0V~

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T
N/P Channel: P-CH Voltage(VDS): -60V Current(ID): -65A RDS(on): RD(max)<18mΩ@-10V VTH: VTH-2.0V~-3.5V Package: TO-220

N/P Channel: P-CH
Voltage(VDS): -60V
Current(ID): -65A
RDS(on): RD(max)<18mΩ@-10V
VTH: VTH-2.0V~-3.5V
Package: TO-220

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G65P06T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G65P06T-ND
Single FETs, MOSFETs 3141-G65P06T-ND
P-60V,RD(MAX)<18M@-1 0V,VTH-2.0V~

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 278-G65P06T G65P06T 3141-G65P06T-ND
Product Name 60V -10V 2.0V MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T Single FETs, MOSFETs
PD 130000 milliwatts 130000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
Packing Method Tube
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