P-60V,RD(MAX)<18M@-1
N/P Channel: P-CH
Voltage(VDS): -60V
Current(ID): -65A
RDS(on): RD(max)<18mΩ@-10V
VTH: VTH-2.0V~-3.5V
Package: TO-220
P-60V,RD(MAX)<18M@-1
P-60V,RD(MAX)<18M@-1
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | G65P06T | 3141-G65P06T-ND | 278-G65P06T | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T | Single FETs, MOSFETs | 60V -10V 2.0V MOSFET Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 65000 milliamps |