P-60V,RD(MAX)<18M@-1
P-60V,RD(MAX)<18M@-1
N/P Channel: P-CH
Voltage(VDS): -60V
Current(ID): -65A
RDS(on): RD(max)<18mΩ@-10V
VTH: VTH-2.0V~-3.5V
Package: TO-220
P-60V,RD(MAX)<18M@-1
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-G65P06T-ND | 278-G65P06T | G65P06T | |
| Product Name | Single FETs, MOSFETs | 60V -10V 2.0V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G65P06T | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-220; TO-220-3 | Tube | TO-220; SOT3 | TO-220; TO-220-3 |
| PD | 130000 milliwatts | 130000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |