N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 50A
RDS(on): RD(max)<17mΩ@10V
VTH: VTH1.0V~2.0V
Package: TO-220
N60V, 50A,RD<17M@10V,VTH1.
N60V, 50A,RD<17M@10V,VTH1.
N60V, 50A,RD<17M@10V,VTH1.
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3141-G60N06T-ND | 278-G60N06T | G60N06T | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G60N06T | Single FETs, MOSFETs | 50A 10V 0V MOSFET Transistor | Single FETs, MOSFETs |
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 85000 milliwatts | 85000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |