MOSFET N-CH 30V 65A TO-251 Product overview: G50N03J from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G50N03J can be used for catalog matching and distributor lookup.
N30V,RD(MAX)<7M@10V,
N30V,RD(MAX)<7M@10V,
N/P Channel: N-CH
Voltage(VDS): 30V
Current(ID): 65A
RDS(on): RD(max)<7mΩ@10V
VTH: VTH1V~2.5V
Package: TO-251
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-G50N03J | G50N03J | 3141-G50N03J-ND | |
| Product Name | 30V 65A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G50N03J |
| PD | 48000 milliwatts | 48000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPAK | SOT3 |
| Packing Method | Tube |
