Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G2312

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

Win Source Part Number: 1376924-G2312
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Power Dissipation (Max): 1.25W
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 20V
Current(ID): 5A
RDS(on): RD(max)<18mΩ@10V
VTH: VTH0.4V~1.0V
Package: SOT-23

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

N20V,RD(MAX)<18M@10V,RD(MAX)<20M