Goford Semiconductor Co., Ltd. FET, MOSFET Arrays G20N06D52

Mosfet Array 2 N-Channel (Dual) 60V 20A (Ta) 45W (Ta) Surface Mount 8-DFN (4.9x5.75)

Mosfet Array 2 N-Channel (Dual) 60V 20A (Ta) 45W (Ta) Surface Mount 8-DFN (4.9x5.75)

MOSFET 2N-CH 60V 20A 8DFN Product overview: G20N06D52 from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-G20N06D52 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376811-G20N06D52
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (4.9x5.75)
Base Product Number: G20N
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 30V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 45W (Ta)
Configuration: 2 N-Channel (Dual)

N/P Channel: N+N-CH
Voltage(VDS): 60V
Current(ID): 20A
RDS(on): RD(max)<30mΩ@10V
VTH: VTH1.0V~2.5V
Package: DFN8L-5*6