Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G2014

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

Win Source Part Number: 1376918-G2014
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 45 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Power Dissipation (Max): 3W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 20V
Current(ID): 14A
RDS(on): RD(max)<9mΩ@4.5V
VTH: VTH0.5V~0.9V
Package: DFN6L-2*2