Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - G2009G G2009G

Description
N/P Channel: N-CH Voltage(VDS): 200V Current(ID): 9A RDS(on): RD(max)<300mΩ@10V VTH: VTH1.0V~2.5V Package: TO-252
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Description
N/P Channel: N-CH Voltage(VDS): 200V Current(ID): 9A RDS(on): RD(max)<300mΩ@10V VTH: VTH1.0V~2.5V Package: TO-252
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - G2009G - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G2009G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G2009G
N/P Channel: N-CH Voltage(VDS): 200V Current(ID): 9A RDS(on): RD(max)<300mΩ@10V VTH: VTH1.0V~2.5V Package: TO-252

N/P Channel: N-CH
Voltage(VDS): 200V
Current(ID): 9A
RDS(on): RD(max)<300mΩ@10V
VTH: VTH1.0V~2.5V
Package: TO-252

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - G2009G
Package Type SOT3; TO-252 (DPAK)
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