Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G2003A

N190V, 3A,RD<540M@10V,VTH1.0V~3.

Win Source Part Number: 1376922-G2003A
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 35 pct.
Mfr: Goford Semiconductor
Series: G
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 190 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Power Dissipation (Max): 1.8W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 190V
Current(ID): 3A
RDS(on): RD(max)<540mΩ@10V
VTH: VTH1.0V~3.0V
Package: SOT-23-3L

MOSFET N-CH 190V 3A SOT-23-3L Product overview: G2003A from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 190V, 3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 190V, 3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G2003A can be used for catalog matching and distributor lookup.

N190V, 3A,RD<540M@10V,VTH1.0V~3.

N190V, 3A,RD<540M@10V,VTH1.0V~3.

N190V, 3A,RD<540M@10V,VTH1.0V~3.