Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G G1K3N10G

Description
N/P Channel: N-CH Voltage(VDS): 100V Current(ID): 5A RDS(on): RD(max)<130mΩ@10V VTH: VTH1V~2V Package: SOT-89
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - G1K3N10G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N/P Channel: N-CH Voltage(VDS): 100V Current(ID): 5A RDS(on): RD(max)<130mΩ@10V VTH: VTH1V~2V Package: SOT-89
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G
N/P Channel: N-CH Voltage(VDS): 100V Current(ID): 5A RDS(on): RD(max)<130mΩ@10V VTH: VTH1V~2V Package: SOT-89

N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 5A
RDS(on): RD(max)<130mΩ@10V
VTH: VTH1V~2V
Package: SOT-89

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
5A 10V 2V MOSFET Transistor
278-G1K3N10G
5A 10V 2V MOSFET Transistor 278-G1K3N10G
N100V, 5A,RD<130M@10V,VTH1V ~2V, Product overview: G1K3N10G from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 10V, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5A, 10V, 2V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G1K3N10G can be used for catalog matching and distributor lookup.

N100V, 5A,RD<130M@10V,VTH1V~2V, Product overview: G1K3N10G from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 10V, 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5A, 10V, 2V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G1K3N10G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - G1K3N10G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G1K3N10G
Single FETs, MOSFETs G1K3N10G
N100V, 5A,RD<130M@10V,VTH1V ~2V,

N100V, 5A,RD<130M@10V,VTH1V~2V,

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-G1K3N10G G1K3N10G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - G1K3N10G 5A 10V 2V MOSFET Transistor Single FETs, MOSFETs
Package Type SOT3; SOT89 Tape & Reel (TR) SOT89; TO-243AA
PD 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR)
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