Goford Semiconductor Co., Ltd. -10V MOSFET Transistor G16P03D3

Description
P30V,RD(MAX)<12M@-10 V,RD(MAX)<18>
Request a Quote Datasheet
Description
P30V,RD(MAX)<12M@-10 V,RD(MAX)<18>
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
-10V MOSFET Transistor
278-G16P03D3
-10V MOSFET Transistor 278-G16P03D3
P30V,RD(MAX)<12M@-10 V,RD(MAX)<18>

P30V,RD(MAX)<12M@-10V,RD(MAX)<18>

Supplier's Site Datasheet
Single FETs, MOSFETs - 3141-G16P03D3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G16P03D3TR-ND
Single FETs, MOSFETs 3141-G16P03D3TR-ND
P-Channel 30V 16A (Tc) 3W (Tc) Surface Mount 8-DFN (3.15x3.05)

P-Channel 30V 16A (Tc) 3W (Tc) Surface Mount 8-DFN (3.15x3.05)

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G16P03D3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G16P03D3CT-ND
Single FETs, MOSFETs 3141-G16P03D3CT-ND
P-Channel 30V 16A (Tc) 3W (Tc) Surface Mount 8-DFN (3.15x3.05)

P-Channel 30V 16A (Tc) 3W (Tc) Surface Mount 8-DFN (3.15x3.05)

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G16P03D3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G16P03D3DKR-ND
Single FETs, MOSFETs 3141-G16P03D3DKR-ND
P30V,RD(MAX)<12M@-10 V,RD(MAX)<18

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1376784-G16P03D3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1376784-G16P03D3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1376784-G16P03D3
Win Source Part Number: 1376784-G16P03D3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 59 pct. MSL Level: 3 (168 Hours) Mfr: Goford Semiconductor Product Status: Active Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V Power Dissipation (Max): 3W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1376784-G16P03D3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Power Dissipation (Max): 3W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G16P03D3 -  - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G16P03D3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G16P03D3
N/P Channel: P-CH Voltage(VDS): -30V Current(ID): -16A RDS(on): RD(max)<12mΩ@-10V VTH: VTH-1.0V~-2.5V Package: DFN3*3-8L

N/P Channel: P-CH
Voltage(VDS): -30V
Current(ID): -16A
RDS(on): RD(max)<12mΩ@-10V
VTH: VTH-1.0V~-2.5V
Package: DFN3*3-8L

Buy Now Datasheet
Single FETs, MOSFETs - G16P03D3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G16P03D3
Single FETs, MOSFETs G16P03D3
MOSFET P-CH 30V 45A DFN3*3-8L

MOSFET P-CH 30V 45A DFN3*3-8L

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G16P03D3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G16P03D3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G16P03D3
P30V,RD(MAX)<12M@-10 V,RD(MAX)<18

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-G16P03D3 3141-G16P03D3TR-ND 1376784-G16P03D3 G16P03D3 G16P03D3
Product Name -10V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - G16P03D3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 55000 milliwatts 55000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) 8-PowerVDFN SOT3 SOT3 8-PowerVDFN 8-PowerVDFN
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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