Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G130N06M

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 90A
RDS(on): RD(max)<12mΩ@10V
VTH: VTH1V~2.4V
Package: TO-263

N60V, 90A,RD<12M@10V,VTH1.0V~2.4 Product overview: G130N06M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 90A, 10V, 0V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90A, 10V, 0V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G130N06M can be used for catalog matching and distributor lookup.