N60V, 90A,RD<12M@10V,VTH1.
N60V, 90A,RD<12M@10V,VTH1.
N60V, 90A,RD<12M@10V,VTH1.
N60V, 90A,RD<12M@10V,VTH1.
N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 90A
RDS(on): RD(max)<12mΩ@10V
VTH: VTH1V~2.4V
Package: TO-263
N60V, 90A,RD<12M@10V,VTH1.
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | G130N06M | 3141-G130N06MCT-ND | 278-G130N06M | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G130N06M | 90A 10V 0V MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 90000 milliamps |