P-100V,-12A,RD(MAX)<
MOSFET P-CH ESD 100V 12A TO-220
N/P Channel: P-CH
Voltage(VDS): -100V
Current(ID): -12A
RDS(on): RD(max)<200mΩ@-10V
VTH: VTH-1.0V~-3.0V
Package: TO-220
P-100V,-12A,RD(MAX)<
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 3141-G12P10TE-ND | G12P10TE | G12P10TE | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G12P10TE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| IDSS | 12000 milliamps |
