Goford Semiconductor Co., Ltd. 10V MOSFET Transistor G110N06T

Description
N60V,RD(MAX)<6.4M@10 V,RD(MAX)<8. Product overview: G110N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G110N06T can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - G110N06T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 3141-G110N06T-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - G110N06T - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N60V,RD(MAX)<6.4M@10 V,RD(MAX)<8. Product overview: G110N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G110N06T can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
10V MOSFET Transistor
278-G110N06T
10V MOSFET Transistor 278-G110N06T
N60V,RD(MAX)<6.4M@10 V,RD(MAX)<8. Product overview: G110N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G110N06T can be used for catalog matching and distributor lookup.

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Product overview: G110N06T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G110N06T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G110N06T - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G110N06T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G110N06T
N/P Channel: N-CH Voltage(VDS): 60V Current(ID): 110A RDS(on): RD(max)<6.4mΩ@10V VTH: VTH1.0V~2.5V Package: TO-220

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 110A
RDS(on): RD(max)<6.4mΩ@10V
VTH: VTH1.0V~2.5V
Package: TO-220

Buy Now Datasheet
Single FETs, MOSFETs - 3141-G110N06T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G110N06T-ND
Single FETs, MOSFETs 3141-G110N06T-ND
N60V,RD(MAX)<6.4M@10 V,RD(MAX)<8.

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Buy Now Datasheet
Single FETs, MOSFETs - G110N06T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G110N06T
Single FETs, MOSFETs G110N06T
N60V,RD(MAX)<6.4M@10 V,RD(MAX)<8.

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-G110N06T 3141-G110N06T-ND G110N06T
Product Name 10V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - G110N06T Single FETs, MOSFETs Single FETs, MOSFETs
PD 160000 milliwatts 160000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
Packing Method Tube
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