P60V,RD(MAX)<52M@-10
N/P Channel: P-CH
Voltage(VDS): -60V
Current(ID): -8A
RDS(on): RD(max)<52mΩ@-10V
VTH: VTH-2V~-3.5V
Package: DFN8L-3*3
P60V,RD(MAX)<52M@-10
P60V,RD(MAX)<52M@-10
P60V,RD(MAX)<52M@-10
P60V,RD(MAX)<52M@-10
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | G08P06D3 | 278-G08P06D3 | 3141-G08P06D3CT-ND | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G08P06D3 | -10V 2V MOSFET Transistor | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 8000 milliamps |