Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G070N06TH

The G070N06TH is an N-channel enhancement mode MOSFET designed for power switching and DC/DC converter applications. It is housed in a TO-220 package and rated for a drain-source voltage of 60V with a continuous drain current of 110A at 25°C and 70A at 100°C. The device has a maximum on-resistance of 6.0 mΩ at a gate-source voltage of 10V and a power dissipation of 160W. It features 100% avalanche testing with a single-pulse avalanche energy of 210 mJ. The thermal resistance junction-to-case is 0.78°C/W and junction-to-ambient is 60°C/W. The operating junction and storage temperature range is -55°C to 150°C. The part is RoHS compliant.