Goford Semiconductor Co., Ltd. -4.5V MOSFET Transistor G06P01E

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4>

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

Win Source Part Number: 1376862-G06P01E
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1087 pF @ 6 V
Power Dissipation (Max): 1.8W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: P-CH
Voltage(VDS): 12V
Current(ID): -4A
RDS(on): RD(max)<28mΩ@-4.5V
VTH: VTH-0.4V~-0.1V
Package: SOT-23