N200V,RD(MAX)<280M@1
N/P Channel: N-CH
Voltage(VDS): 200V
Current(ID): 9A
RDS(on): RD(max)<0.28Ω@10V
VTH: VTH1.0V~2.0V
Package: TO-252
N200V,RD(MAX)<280M@1
N200V,RD(MAX)<280M@1
MOSFET N-CH 200V 11A TO-252 Product overview: 630A from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 11A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 11A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-630A can be used for catalog matching and distributor lookup.
N200V,RD(MAX)<280M@1
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 630A | 3141-630ACT-ND | 278-630A | 630A | |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 630A | Single FETs, MOSFETs | 200V 11A TO-252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 200 volts | ||||
| IDSS | 11000 milliamps |
