Goford Semiconductor Co., Ltd. Single FETs, MOSFETs 60N06

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

Win Source Part Number: 1377542-60N06
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
Power Dissipation (Max): 85W
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 60A
RDS(on): RD(max)<17mΩ@10V
VTH: VTH1V~2V
Package: TO-252

MOSFET N-CH 60V 50A TO-252 Product overview: 60N06 from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-60N06 can be used for catalog matching and distributor lookup.

N60V,RD(MAX)<17M@10V,RD(MAX)<21M