Goford Semiconductor Co., Ltd. 60V 5.5A SOT-23 MOSFET Transistor 06N06L

MOSFET N-CH 60V 5.5A SOT-23-3L Product overview: 06N06L from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.5A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.5A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-06N06L can be used for catalog matching and distributor lookup.

N60V,RD(MAX)<60M@10V,RD(MAX)<80M

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

N60V,RD(MAX)<60M@10V,RD(MAX)<80M

Win Source Part Number: 1376851-06N06L
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3L
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Power Dissipation (Max): 960mW
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 60V
Current(ID): 5.5A
RDS(on): RD(max)<60mΩ@10V
VTH: VTH1.1V~2.5V
Package: SOT-23-3