GigaDevice Memory GD5F2GQ4RF9IGY

Description
FLASH - NAND Memory IC 2Gb (256M x 8) SPI - Quad I/O 120MHz 8-LGA (6x8)
Request a Quote Datasheet
Description
FLASH - NAND Memory IC 2Gb (256M x 8) SPI - Quad I/O 120MHz 8-LGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - GD5F2GQ4RF9IGY-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 2Gb (256M x 8) SPI - Quad I/O 120MHz 8-LGA (6x8)

FLASH - NAND Memory IC 2Gb (256M x 8) SPI - Quad I/O 120MHz 8-LGA (6x8)

Buy Now Datasheet
IC FLASH 2GBIT SPI/QUAD I/O 8LGA

IC FLASH 2GBIT SPI/QUAD I/O 8LGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - GD5F2GQ4RF9IGY - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
GD5F2GQ4RF9IGY
Integrated Circuits (ICs) - Memory GD5F2GQ4RF9IGY
IC FLASH 2GBIT SPI/QUAD I/O 8LGA

IC FLASH 2GBIT SPI/QUAD I/O 8LGA

Supplier's Site
Memory - GD5F2GQ4RF9IGY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit SPI - Quad I/O 120 MHz 8-LGA (6x8)

FLASH - NAND Memory IC 2Gbit SPI - Quad I/O 120 MHz 8-LGA (6x8)

Buy Now

Technical Specifications

  DigiKey Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number GD5F2GQ4RF9IGY-ND GD5F2GQ4RF9IGY GD5F2GQ4RF9IGY GD5F2GQ4RF9IGY
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash Flash; Flash Flash; Non-Volatile Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 8-VLGA Exposed Pad 8-VLGA Exposed Pad 8-VLGA Exposed Pad
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-S25FL032P0XNFB000-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 32000 kbits
View Details
5 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C04/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details