FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (5x6)
FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (5x6)
FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O 133MHz 7ns 8-WSON (5x6)
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 16M x 8 7ns 8-Pin WSON EP T/R Product overview: GD25Q128EWIGR from GigaDevice is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, Quad, 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Dual, Quad, 3V, 3.3V, Memory IC and Storage Component. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-GD25Q128EWIGR can be used for catalog matching and distributor lookup.
Win Source Part Number: 977509-GD25Q128EWIGR
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 128Mb (16M x 8)
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
ECCN: 3A991B1A
Fake Threat In the Open Market: 52 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: GigaDevice Semiconductor (HK) Limited
Other Names: 1970-GD25Q128EWIGRDK
FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 7 ns 8-WSON (5x6)
128Mbit 133MHz WSON-8-EP(5x6) NOR FLASH ROHS
128MBIT NOR FLASH /3.3V /WSON8 6
IC FLASH 128MBIT SPI/QUAD 8WSON
128MBIT NOR FLASH /3.3V /WSON8 6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1970-GD25Q128EWIGRDKR-ND | 774-GD25Q128EWIGR | 977509-GD25Q128EWIGR | GD25Q128EWIGR | GD25Q128EWIGR | GD25Q128EWIGR | GD25Q128EWIGR | GD25Q128EWIGR |
| Product Name | Memory | Dual Quad 3V 3.3V Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory >> NOR FLASH | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash | Flash | Flash; Non-Volatile | Flash; FLASH | Flash | Flash; FLASH - NOR | Flash; Non-Volatile | Flash; Flash |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad | |||||
| Supply Voltage | 2.7V ~ 3.6V | -3.3V; 2.7 | 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V | 2.7V~3.6V | 2.7V ~ 3.6V | Surface Mount |
