GigaDevice Memory GD25LQ10CEIGR

Description
IC FLASH 1MBIT SPI/QUAD 8USON
Datasheet
Description
IC FLASH 1MBIT SPI/QUAD 8USON
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1MBIT SPI/QUAD 8USON

IC FLASH 1MBIT SPI/QUAD 8USON

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - GD25LQ10CEIGR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
GD25LQ10CEIGR
Integrated Circuits (ICs) - Memory GD25LQ10CEIGR
IC FLASH 1MBIT SPI/QUAD 8USON

IC FLASH 1MBIT SPI/QUAD 8USON

Supplier's Site
Memory - GD25LQ10CEIGR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-USON (2x3)

FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-USON (2x3)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number GD25LQ10CEIGR GD25LQ10CEIGR GD25LQ10CEIGR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 1000 kbits 1000 kbits 1000 kbits
Data Rate 104 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016D - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 736-DP84T22V-25 - ERSAELECTRONICS PTE. LTD.
Specs
Operating Temperature 0 C (32 F)
View Details
3 suppliers
Memory - JS28F640P33T85A - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 85 ns
Density 64000 kbits
View Details
Memory - 40060389 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers