GeneSiC Semiconductor, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs GA10JT12-263

Description
TRANS SJT 1200V 25A
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GA10JT12-263 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Sic Junction Transistor, 1.2Kv, 10A, To-263; Mosfet Module Configuration Genesic Semiconductor - 08X5868 - Newark, An Avnet Company
    Newark, An Avnet Company
  • SiC Junction Transistor,1200V,25A,Standard,TO-263 - GA10JT12-263 - Karl Kruse GmbH & Co. KG
    Karl Kruse GmbH & Co. KG
Datasheet
Description
TRANS SJT 1200V 25A
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GA10JT12-263 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
GA10JT12-263
Discrete Semiconductor Products - Transistors - FETs, MOSFETs GA10JT12-263
TRANS SJT 1200V 25A

TRANS SJT 1200V 25A

Supplier's Site
Sic Junction Transistor, 1.2Kv, 10A, To-263; Mosfet Module Configuration Genesic Semiconductor - 08X5868 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sic Junction Transistor, 1.2Kv, 10A, To-263; Mosfet Module Configuration Genesic Semiconductor
08X5868
Sic Junction Transistor, 1.2Kv, 10A, To-263; Mosfet Module Configuration Genesic Semiconductor 08X5868
SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO-263; MOSFET Module Configuration:Single ; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO-263; MOSFET Module Configuration:Single; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site
SiC Junction Transistor,1200V,25A,Standard,TO-263 - GA10JT12-263 - Karl Kruse GmbH & Co. KG
Karl Kruse GmbH & Co. KG
Kaarst, Germany
SiC Junction Transistor,1200V,25A,Standard,TO-263
GA10JT12-263
SiC Junction Transistor,1200V,25A,Standard,TO-263 GA10JT12-263
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Karl Kruse GmbH & Co. KG
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number GA10JT12-263 08X5868 GA10JT12-263
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Junction Transistor, 1.2Kv, 10A, To-263; Mosfet Module Configuration Genesic Semiconductor SiC Junction Transistor,1200V,25A,Standard,TO-263
Package Type 1403 pF @ 800 V TO-3; TO-263
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