GeneSiC Semiconductor, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GA100JT12-227 GA100JT12-227

Description
Manufacturer: GeneSiC Semiconductor Win Source Part Number: 774970-GA100JT12-227 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A Categories: Discrete Semiconductor Products Manufacturer Package: SOT-227 Drain Source Voltage: 1200V Input Capacitance (Ciss) (Maximum) @ Vds: 14400pF @ 800V Power Dissipation (Maximum): 535W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 100A Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 10
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Description
Manufacturer: GeneSiC Semiconductor Win Source Part Number: 774970-GA100JT12-227 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A Categories: Discrete Semiconductor Products Manufacturer Package: SOT-227 Drain Source Voltage: 1200V Input Capacitance (Ciss) (Maximum) @ Vds: 14400pF @ 800V Power Dissipation (Maximum): 535W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 100A Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 10
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - GA100JT12-227 - 774970-GA100JT12-227 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GA100JT12-227
774970-GA100JT12-227
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GA100JT12-227 774970-GA100JT12-227
Manufacturer: GeneSiC Semiconductor Win Source Part Number: 774970-GA100JT12-227 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A Categories: Discrete Semiconductor Products Manufacturer Package: SOT-227 Drain Source Voltage: 1200V Input Capacitance (Ciss) (Maximum) @ Vds: 14400pF @ 800V Power Dissipation (Maximum): 535W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 100A Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 10

Manufacturer: GeneSiC Semiconductor
Win Source Part Number: 774970-GA100JT12-227
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-227
Drain Source Voltage: 1200V
Input Capacitance (Ciss) (Maximum) @ Vds: 14400pF @ 800V
Power Dissipation (Maximum): 535W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 100A
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 10

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - GA100JT12-227 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
GA100JT12-227
Discrete Semiconductor Products - Transistors - FETs, MOSFETs GA100JT12-227
TRANS SJT 1200V 160A SOT227

TRANS SJT 1200V 160A SOT227

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 774970-GA100JT12-227 GA100JT12-227
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - GA100JT12-227 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT3 SOT-227-4, miniBLOC
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