SIC MOSFET N-CH 41A TO247-3
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: G3R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
SIC MOSFET N-CH 41A TO247-3 Product overview: G3R75MT12D from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 41A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 41A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G3R75MT12D can be used for catalog matching and distributor lookup.
SIC MOSFET, N-CH, 1.2KV, 41A, 207W; MOSFET Module Configuration:Single
SIC MOSFET N-CH 41A TO247-3
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | G3R75MT12D | 278-G3R75MT12D | 89AH0995 | G3R75MT12D | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs | 41A MOSFET Transistor | Sic Mosfet, N-Ch, 1.2Kv, 41A, 207W; Mosfet Module Configuration Genesic Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | ||||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| IDSS | 41000 milliamps | 41000 milliamps | |||
| PD | 207000 milliwatts | 182 milliwatts |
