Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: G3R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
SIC MOSFET N-CH 11A TO263-7 Product overview: G3R350MT12J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G3R350MT12J can be used for catalog matching and distributor lookup.
SIC MOSFET, N-CH, 1.2KV, 11A, 75W; MOSFET Module Configuration:Single
SIC MOSFET N-CH 11A TO263-7
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-G3R350MT12J | 89AH0987 | G3R350MT12J | |
| Product Name | Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs | 11A MOSFET Transistor | Sic Mosfet, N-Ch, 1.2Kv, 11A, 75W; Mosfet Module Configuration Genesic Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT3 | Tube | TO-3 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1200 volts | |||
| Transconductance | 0.0018 kS |
