GeneSiC Semiconductor, Inc. Single FETs, MOSFETs G3R20MT12K

Description
SIC MOSFET N-CH 128A TO247-4
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Description
SIC MOSFET N-CH 128A TO247-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - G3R20MT12K - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G3R20MT12K
Single FETs, MOSFETs G3R20MT12K
SIC MOSFET N-CH 128A TO247-4

SIC MOSFET N-CH 128A TO247-4

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G3R20MT12K - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G3R20MT12K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G3R20MT12K
SIC MOSFET N-CH 128A TO247-4

SIC MOSFET N-CH 128A TO247-4

Supplier's Site
Sic Mosfet, N-Ch, 1.2Kv, 128A, 542W; Mosfet Module Configuration Genesic Semiconductor - 89AH0980 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N-Ch, 1.2Kv, 128A, 542W; Mosfet Module Configuration Genesic Semiconductor
89AH0980
Sic Mosfet, N-Ch, 1.2Kv, 128A, 542W; Mosfet Module Configuration Genesic Semiconductor 89AH0980
SIC MOSFET, N-CH, 1.2KV, 128A, 542W; MOSFET Module Configuration:Single ; Continuous Drain Current Id:128A; Drain Source Voltage Vds:1.2kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.69V RoHS Compliant: Yes

SIC MOSFET, N-CH, 1.2KV, 128A, 542W; MOSFET Module Configuration:Single; Continuous Drain Current Id:128A; Drain Source Voltage Vds:1.2kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.69V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number G3R20MT12K G3R20MT12K 89AH0980
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mosfet, N-Ch, 1.2Kv, 128A, 542W; Mosfet Module Configuration Genesic Semiconductor
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide)
V(BR)DSS 1200 volts
IDSS 128000 milliamps 128000 milliamps
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