Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series: G2R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 3300 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
SIC MOSFET N-CH TO263-7 Product overview: G2R120MT33J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G2R120MT33J can be used for catalog matching and distributor lookup.
SIC MOSFET N-CH TO263-7
MOSFET Module Configuration:Single
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-G2R120MT33J | G2R120MT33J | 89AH0975 | |
| Product Name | Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Module Configuration Genesic Semiconductor |
| Polarity | N-Channel | N-Channel | ||
| Package Type | TO-263; SOT3 | Tube | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3 |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 3300 volts |