GeneSiC Semiconductor, Inc. Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs G2R1000MT33J

Description
Alternative Parts (Cross-Reference): Cross Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: G2R™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 3300 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G2R1000MT33J - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Sic Mosfet, N-Ch, 3.3Kv, 4A, 74W; Mosfet Module Configuration Genesic Semiconductor - 89AH0974 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Alternative Parts (Cross-Reference): Cross Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: G2R™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 3300 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Alternative Parts (Cross-Reference): Cross Manufacturer: GeneSiC Semiconductor Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: G2R™ Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 3300 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc)

Alternative Parts (Cross-Reference): Cross
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: G2R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 3300 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
4A MOSFET Transistor
278-G2R1000MT33J
4A MOSFET Transistor 278-G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7 Product overview: G2R1000MT33J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G2R1000MT33J can be used for catalog matching and distributor lookup.

SIC MOSFET N-CH 4A TO263-7 Product overview: G2R1000MT33J from GeneSiC Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G2R1000MT33J can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G2R1000MT33J - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G2R1000MT33J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7

SIC MOSFET N-CH 4A TO263-7

Supplier's Site
Sic Mosfet, N-Ch, 3.3Kv, 4A, 74W; Mosfet Module Configuration Genesic Semiconductor - 89AH0974 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N-Ch, 3.3Kv, 4A, 74W; Mosfet Module Configuration Genesic Semiconductor
89AH0974
Sic Mosfet, N-Ch, 3.3Kv, 4A, 74W; Mosfet Module Configuration Genesic Semiconductor 89AH0974
SIC MOSFET, N-CH, 3.3KV, 4A, 74W; MOSFET Module Configuration:Single ; Continuous Drain Current Id:4A; Drain Source Voltage Vds:3.3kV; No. of Pins:7Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

SIC MOSFET, N-CH, 3.3KV, 4A, 74W; MOSFET Module Configuration:Single; Continuous Drain Current Id:4A; Drain Source Voltage Vds:3.3kV; No. of Pins:7Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-G2R1000MT33J G2R1000MT33J 89AH0974
Product Name Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs 4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mosfet, N-Ch, 3.3Kv, 4A, 74W; Mosfet Module Configuration Genesic Semiconductor
Polarity N-Channel N-Channel
Package Type SOT3 Tube Surface Mount TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 3300 volts
Transconductance 9.00E-4 kS
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