GaN Systems Inc. MOSFET GS66508B-E01-MR

The GS66508B-E01-MR is a 650 V enhancement mode GaN transistor in a GaNPX® bottom-side cooled package with a 7.1 x 8.5 mm² footprint. It has a 50 mΩ on-resistance and a 30 A continuous drain current at 25 °C. The gate drive operates from 0 V to 6 V with transient tolerance up to ±20 V. Junction-to-case thermal resistance is 0.5 °C/W. Zero reverse recovery charge eliminates body diode losses. It is RoHS 6 compliant and supplied on a 7-inch mini-reel with 250 units. This variant shares the electrical and thermal ratings of the GS66508B series, including a -55 °C to +150 °C junction temperature range and 260 °C soldering tolerance.