GaN Systems Inc. MOSFET GS66504B-E01-MR

The GS66504B-E01-MR is a bottom-side cooled 650 V enhancement mode gallium nitride transistor in a GaNPX® package with a 5.0 x 6.6 mm² PCB footprint. It has a drain-source on-resistance of 100 mΩ at 25 °C and a continuous drain current rating of 15 A at 25 °C case temperature. The device supports gate drive voltages from 0 V to 6 V and withstands transient gate voltages from -20 V to +10 V. It features zero reverse recovery loss, reverse current capability, and a junction-to-case thermal resistance of 1.0 °C/W. The transistor is RoHS 6 compliant and rated for operation from -55 °C to +150 °C junction temperature. It is supplied on a mini-reel with 250 units per reel.