GaN Systems Inc. MOSFET GS61008T-E01-MR

The GS61008P is a 100 V enhancement mode gallium nitride transistor designed for high-efficiency power conversion applications. It is packaged in a GaNPX® bottom-side cooled configuration with a 7.6 x 4.6 mm² PCB footprint. The device has a typical on-resistance of 7 mΩ and can sustain a continuous drain current of 90 A at 25 °C case temperature. It features a junction-to-case thermal resistance of 0.55 °C/W and operates with a gate drive voltage range of 0 V to 6 V, tolerant to transients up to -20 V / +10 V. The transistor supports switching frequencies above 100 MHz, offers zero reverse recovery loss, and is RoHS 6 compliant. The ordering code GS61008T-E01-MR corresponds to the Mini-Reel packing variant of this series, with no distinguishing electrical differences from the base GS61008P part number.